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CHV2241
K-band Oscillator with integrated Q-band Harmonic Mixer
GaAs Monolithic Microwave IC Description
The CHV2241 is a monolithic multifunction proposed for frequency generation and transposition. It integrates a K-band oscillator, a Q-band harmonic mixer and buffer amplifiers. For performance optimisation, an external port (ERC) allows a passive resonator coupling to the oscillator (at half output frequency). All the active devices are internally self biased. The circuit is manufactured with the P-HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
+V
F_lo = (F_rf - F_if)/2 ERC HIGH Q RESONATOR
-V
RF
x2
LO_out_aux
IF
Multifunction block diagram
0 -1 Conversion loss (dB) -2 -3 -4 -5 -6 -7 -8 -9 -10 37 37,5 38 RF Frequency (GHz) 38,5 39
Main Features
n K-band Oscillator + Q-band harmonic mixer n External resonator for centre frequency control and phase noise optimisation n High quality oscillator when coupled to a dielectric resonator n Low conversion loss n High temperature range n On chip self biasing n Automatic assembly oriented n Chip size 1.82 x 0.97 x 0.1 mm
Typical conversion loss characteristic
Main Characteristics
Tamb = +25C Symbol F_rf F_lo Pn Lc RF frequency Oscillator frequency Oscillator phase noise @ 100kHz (38GHz) Conversion loss Parameter Min 37.5 Typ 38.25 -100 7 Max 39 Unit GHz dBc/Hz dB
(F_rf - F_if)/2
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHV22411074 -15-Mar.-01 1/8 Specifications subject to change without notice united monolithic semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHV2241
Electrical Characteristics
K-band Oscillator / Q-band Mixer
Full temperature range, used according to section "Typical assembly and bias configuration" Symbol F_rf F_if F_lo P_lo Pn Parameter RF frequency IF frequency Oscillator frequency (1) Auxiliary LO output power (optional) Phase noise (given at RF frequency) (2) @ 1kHz @ 10kHz @ 100kHz @ 200kHz @ 1MHz Frequency pushing vs positive supply voltage Conversion loss RF input power at 1dB LO leakage at IF port (3) 2LO leakage at RF port (3) VSWR at RF input port IF load impedance Positive supply voltage (4) Positive supply current Negative supply voltage (4) Negative supply current Operating temperature range Min 37.5 0.1 Typ 38.25 Max 39 1.5 Unit GHz GHz dBm dBc/Hz
(F_rf - F_if)/2 -15 -8 -4 -45 -78 -105 -114 -129 300 3 -13 7 -8 -25 -40 2:1 50 4.5 50 -4.5 6 -35 -68 -95 -104 -119 1000 11 0 -18 -30 2.5:1 4.6 90 -4.4 10 +100
P_V+ Lc P_1dB_rf Plolk_if P2lo_rf VSWR_rf IMP_if +V +I -V -I Top
kHz/v dB dBm dBm dBm V mA V mA C
4.4 -4.6 -40
(1) The centre frequency is given by the external passive resonator. See part "Proposed external high Q resonator" for frequency temperature drift example. DRO frequency long term stability is DR environment stability dependant (hermeticity ...). (2) This characteristic depends on the external resonator Q, the given performance has been obtained by using an external dielectric resonator (see section "Proposed External High Q resonator") (3) Without external filtering (4) Negative supply voltage must be applied at least 1us before positive supply voltage.
Ref. : DSCHV22411074 -15-Mar.-01
2/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band Oscillator / Q-band Mixer
Absolute Maximum Ratings (1)
Symbol P_rf +V -V +I -I Tstg
(1) (2)
CHV2241
Parameter Maximum RF input power (2) Positive supply voltage Negative supply voltage Positive supply current Negative supply current Storage temperature range
Values 7 5 -5 100 15 -55 to +155
Unit dBm V V mA mA C
Operation of this device above anyone of these parameters may cause permanent damage. CW mode.
Ref. : DSCHV22411074 -15-Mar.-01
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHV2241
K-band Oscillator / Q-band Mixer
Chip Mechanical Data and Pin References
4
3 2 1 13 12 11 10 9 8
5 6 7
Unit = m External chip size (including saw streets)= 1820 x 970 +/- 35 Chip thickness = 100 +/- 10 HF Pads (2, 6) = 68 x 118 DC/IF Pads (+auxiliary LO output) = 100 x 100
Pin number 1,3,5,7,8 2 4 6 9 10 11 12,13 Pin name Description
Ground : should not be bonded. If required, please ask for more information ERC External Resonator Coupling Port LO_OUT_AUX Oscillator auxiliary output port (optional) RF input port RF IF output port IF NC -V Negative supply voltage +V Positive supply voltage
Ref. : DSCHV22411074 -15-Mar.-01
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band Oscillator / Q-band Mixer
Typical Assembly and Bias Configuration
4
CHV2241
-strip line
3 2 1 13 12 11 10 9 8
5 6
-strip line
L_erc
L_rf
7
>= 120pF
>= 120pF
+V
-V
IF
DC and control lines
This drawing shows an example of assembly and bias configuration. All the transistors are internally self biased. The positive and negative voltages can be respectively connected together (see drawing) according to the recommended values given in the electrical characteristics table. For the RF pads the equivalent wire bonding inductances (diameter=25m) have to be according to the following recommendation. Equivalent inductance (nH) ERC (2) L_erc = 0.4 LO_OUT_AUX (4) Not critical , < 1nH Optional RF (6) L_rf = 0.28 Port Approximative wire length (mm) 0.5
0.35
For a micro-strip configuration a hole in the substrate is recommended for chip assembly.
Ref. : DSCHV22411074 -15-Mar.-01
5/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHV2241
K-band Oscillator / Q-band Mixer
Proposed external high Q resonator
This chip has been especially designed to be coupled to a high Q dielectric resonator (For example typical Q. @ 10 GHz=24000 for MURATA /DRD036EC016). The resonance is given by a dielectric cylinder coupled to a 50 line. The size of the resonator gives the centre frequency and the space between the resonator and the line gives the loaded quality factor. The following drawing shows an example of external configuration. As it is the assembly of a test fixture all the biases are used and the auxiliary LO output is connected. However, for a fixed application the configuration given in the previous section can by applied.
Alumina substrate : thickness=250m
Dielectric resonator
50 Ohm resistance d 2l 3l
via hole
Additional information n Resonator reference example = MURATA /DRD036EC016. Other kind of resonators can be used (from TEKELEC or TRANS-TECH). The temperature coefficient has to be chosen according to the environment. n Temperature drift : For example, in the -40 to +100C temperature range, the frequency drift @ 38GHz is 12 MHz with the MURATA / DRD036EC016 resonator. n Resonator coupling : d=0.3mm , l=1.5mm. These values have been used in the test fixture, of course they can be modified if the environment is different. n 50 line width on alumina (heigth=0.25mm) = 0.238mm n Cavity size (mm) : 18 x 17 x 7
Ref. : DSCHV22411074 -15-Mar.-01 6/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band Oscillator / Q-band Mixer
External Resonator Coupling Information
CHV2241
The external resonator has to be an equivalent series resonance. However, this impedance must be compatible to the negative impedance of the oscillator ERC port in order to obtain the oscillation conditions and to avoid parasitic oscillations. Typical impedance of ERC port (Zerc) is given in the following table. The diagram shows this impedance in a wider band. These values don't include the wire bonding (self L_erc given in the previous section).
The recommended external resonator properties are: * series equivalent resonance * highest possible Q (dielectric resonator, cavity ...) if no tuning bandwidth required * resistance at resonant frequency lower than 20 * out-off band impedance has to be designed to avoid parasitic oscillation.
Ref. : DSCHV22411074 -15-Mar.-01
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHV2241
K-band Oscillator / Q-band Mixer
Ordering Information
Chip form : CHV2241-99F/00
Information furnished is believed to be accurate and reliable. However united monolithic semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors S.A.S.
Ref. : DSCHV22411074 -15-Mar.-01
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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